InSb Quantum Dots in an InAsSb Matrix Grown by Molecular Beam Epitaxy

Characterization of InSb quantum dots in InAs matrix grown by molecular beam epitaxy for infrared photodetectors

Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxy.

We report on realization and transport spectroscopy study of single quantum dots (QDs) made from InSb nanowires grown by molecular beam epitaxy (MBE). The nanowires employed are 50-80 nm in diameter and the QDs are defined in the nanowires between the source and drain contacts on a Si/SiO2 substrate. We show that highly tunable QD devices can be realized with the MBE-grown InSb nanowires and th...

High-mobility thin InSb films grown by molecular beam epitaxy

The problem of preparing high-mobility thin InSb films is revisited for magnetoresistive and spintronic sensor applications. We introduce a growth process that significantly improves the electrical properties of thin unintentionally doped InSb layers ~60–300 nm! epitaxially grown on GaAs~100! substrates by reducing the density of dislocations within the interfacial layer. The epilayer propertie...

Photoluminescence and bowing parameters of InAsSb/ InAs multiple quantum wells grown by molecular beam epitaxy

Detailed studies are reported on the photoluminescence of InAsSb/ InAs multiple quantum wells grown by molecular beam epitaxy on InAs substrates with the Sb mole fraction ranging from 0.06 to 0.13. From 4 K photoluminescence the band alignment was determined to be staggered type II. By comparing the emission peak energies with a transition energy calculation it was found that both the conductio...

Selfassembled quantum dots of InSb grown on InP by atomic layer molecular beam epitaxy: Morphology and strain relaxation

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